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| SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features * High power Recommended power output * Low operating current Applications * Solid state laser excitation * Medical use Structure GaAlAs double-hetero-type laser diode Absolute Maximum Ratings (Tc = 25C) * Optical power output Po 100 * Reverse voltage VR LD 2 PD 15 * Operating temperature Topr -10 to +50 * Storage temperature Tstg -40 to +85 Pin Configuration Po = 90mW mW V V C C 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E88057F81-PS SLD301V Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength1 Monitor current Radiation angle (F. W. H. M.) Positional accuracy Differential efficiency Perpendicular Parallel Position Angle Symbol Ith Iop Vop p Imon // X, Y D PO = 90mW PO = 90mW PO = 90mW PO = 90mW VR = 10V PO = 90mW 770 Conditions Min. (Tc: Case temperature, Tc = 25C) Typ. 150 250 1.9 Max. 200 400 3.0 840 0.15 28 12 PO = 90mW PO = 90mW 0.65 0.9 40 17 50 3 Unit mA mA V nm mA degree degree m degree mW/mA F. W. H. M. : Full Width at Half Maximum 1 Wavelength Selection Classification Type SLD301V-1 SLD301V-2 SLD301V-3 Type SLD301V-21 SLD301V-24 SLD301V-25 Wavelength (nm) 785 15 810 10 830 10 Wavelength (nm) 798 3 807 3 810 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1mW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollinated laser diode beams are fairly safe at a laser diode. Generally speaking, however, it is best NOT to LOCK into laser beams, under any circumstances. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device -2- SLD301V Example of Representative Characteristics Optical power output vs. Forward current characteristics 200 TC = 0C TC = 25C TC = -10C Optical power output vs. Monitor current characteristics Po - Optical power output [mW] Po - Optical power output [mW] 100 TC = 50C TC = 0C 100 TC = 25C TC = -10C TC = 50C 50 0 0 0 0.05 Imon - Monitor current [mA] 0.1 0 250 IF - Forward current [mA] 500 Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (parallel to junction) TC = 25C Radiation intensity (optional scale) Ith - Threshold current [mA] 500 PO = 90mW PO = 60mW PO = 30mW 100 -10 0 10 20 30 40 50 -30 -20 -10 0 10 20 30 Tc - Case temperature [C] Angle [degree] Power depecdence of near field pattern TC = 25C Radiation intensity (optional scale) p - Oscillation wavelength [nm] Oscillation wavelength vs. Temperature characteristics 830 PO = 90mW 820 810 PO = 90mW PO = 75mW PO = 50mW PO = 25mW 800 790 50m 780 -10 0 10 20 30 40 50 Tc - Case temperature [C] -3- SLD301V Differential efficiency vs. Temperature characteristics 1.5 40 Power dependence of polarization ratio Tc = 25C D - Differential efficiency [mW/mA] 30 Polarization ratio -10 0 10 20 30 40 50 1.0 20 0.5 10 0 0 0 20 40 60 80 100 120 Tc - Case temperature [C] Po - Optical power output [mW] -4- SLD301V Power dependence of wavelength (Spectrum) Tc = 25C Po = 20mW Relative radiant intensity Relative radiant intensity Tc = 25C Po = 40mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25C Po = 60mW Relative radiant intensity Relative radiant intensity Tc = 25C Po = 80mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25C Po = 100mW Relative radiant intensity 800 805 Wavelength [nm] 810 -5- SLD301V Temperature dependence of wavelength (Po = 90mW) Tc = -6C Tc = 12C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tc = 23C Tc = 35C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tc = 45C Relative radiant intensity 805 815 Wavelength [nm] 825 -6- SLD301V Package Outline Unit: mm M-248 (LO-11) Reference Slot 1.0 3 2 1 Photo Diode 0 9.0 - 0.015 7.7 MAX 6.9 MAX 3.5 Window Glass 0.6 MAX 3 - 0.45 PCD 2.54 PACKAGE WEIGHT 0.4 Reference Plane LD Chip Optical Distance = 2.55 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 -7- 7.0 MAX 1.2g 1.5 3.4 MAX 2.45 |
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